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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION *With TO-3P(I) package *Complement to type 2SA1516 APPLICATIONS *Audio and general purpose power amplifier applications *Recommend for 80W high fidelity audio frequency amplifier output stage
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SC3907
*
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 180 180 5 12 1.2 130 150 -55~150 UNIT V V V A A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=8 A;IB=0.8 A IC=7A ; VCE=5V VCB=180V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 55 35 MIN 180
2SC3907
TYP.
MAX
UNIT V
0.3 1.0
2.0 1.5 5 5 180
V V A A
30 270
MHz pF
hFE-1 classifications R 55-110 O 90-180
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3907
Fig.2 Outline dimensions
3


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